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 BAS21J_1 ? NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 8 March 2007 3 of 10 NXP Semiconductors BAS21J Single high-speed switching diode 5. Limiting values [1] Pulse test: tp ≤ 300 μs; δ≤0.02. [2] Tj =25°C prior to surge. [3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [4] Re?ow soldering is the only recommended soldering method. 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [2] Re?ow soldering is the only recommended soldering method. [3] Soldering point of cathode tab. Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage - 300 V VR reverse voltage - 300 V IF forward current [1]- 250 mA IFRM repetitive peak forwardtp≤ 0.5 ms; current δ≤0.25 -1A IFSM non-repetitive peak forward current square wave [2] tp = 100 μs-3A tp = 1 ms - 2.3 A tp =10ms - 1.7 A Ptot total power dissipation Tamb ≤25 °C [3][4] - 550 mW Tj junction temperature - 150 °C Tamb ambient temperature ?65 +150 °C Tstg storage temperature ?65 +150 °C Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1][2] - - 230 K/W Rth(j-sp) thermal resistance from junction to solder point [3] - - 55 K/W |